document number: 93493 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 24-jun-08 1 medium power silicon rectifier diodes, 12 a 1n1...a, 1n36..a series vishay high power products features ? voltage ratings from 50 to 1000 v ? high surge capability ? low thermal impedance ? high temperature rating ? can be supplied as jan and jan-tx devices in accordance with mil-s-19500/260 ? rohs compliant note (1) jedec registered values electrical specifications notes (1) jedec registered values (2) basic part number indicates cathode to case; for anode to case, add ?r? to part number, e.g., 1n1199ra product summary i f(av) 12 a do-203aa (do-4) rohs compliant major ratings and characteristics parameter test conditions values units i f(av) 12 (1) a t c 150 (1) c i fsm 50 hz 230 a 60 hz 240 (1) i 2 t 50 hz 260 a 2 s 60 hz 240 t c - 65 to 200 c v rrm range 50 to 1000 (1) v voltage ratings type number (2) v rrm , maximum repetitive peak reverse voltage v v r(rms) , maximum rms reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v v rm , maximum direct reverse voltage v t c = - 65 c to 200 c t c = - 65 c to 200 c t c = - 65 c to 200 c t c = - 65 c to 200 c 1n1199a 50 (1) 35 (1) 100 (1) 50 (1) 1n1200a 100 (1) 70 (1) 200 (1) 100 (1) 1n1201a 150 (1) 105 (1) 300 (1) 150 (1) 1n1202a 200 (1) 140 (1) 350 (1) 200 (1) 1n1203a 300 (1) 210 (1) 450 (1) 300 (1) 1N1204A 400 (1) 280 (1) 600 (1) 400 (1) 1n1205a 500 (1) 350 (1) 700 (1) 500 (1) 1n1206a 600 (1) 420 (1) 800 (1) 600 (1) 1n3670a 700 (1) 490 900 (1) 700 (1) 1n3671a 800 (1) 560 1000 (1) 800 (1) 1n3672a 900 (1) 630 1100 (1) 900 (1) 1n3673a 1000 (1) 700 1200 (1) 1000 (1)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93493 2 revision: 24-jun-08 1n1...a, 1n36..a series vishay high power products medium power silicon rectifier diodes, 12 a notes (1) jedec registered values (2) i 2 t for time t x = i 2 t x t x (3) maximum peak reverse current (i rm ) under same conditions 2 x rated i r(av) forward conduction parameter symbol test conditions values units maximum average forward current at case temperature i f(av) 180 sinusoidal conduction 12 (1) a 150 (1) c maximum peak one cycle non-repetitive surge current i fsm half cycle 50 hz sine wave or 6 ms rectangular pulse following any rated load condition and with rated v rrm applied 230 a half cycle 60 hz sine wave or 5 ms rectangular pulse 240 (1) half cycle 50 hz sine wave or 6 ms rectangular pulse following any rated load condition and with v rrm applied following surge = 0 275 half cycle 60 hz sine wave or 5 ms rectangular pulse 285 maximum i 2 t for fusing i 2 t t = 10 ms with rated v rrm applied following surge, initial t j = 200 c 260 a 2 s t = 8.3 ms 240 maximum i 2 t for individual device fusing t = 10 ms with v rrm = 0 following surge, initial t j = 200 c 370 t = 8.3 ms 340 maximum i 2 t for individual device fusing i 2 t (2) t = 0.1 to 10 ms, v rrm = 0 following surge 3715 a 2 s maximum forward voltage drop v fm i f(av) = 12 a (38 a peak), t c = 25 c 1.35 (1) v maximum average reverse current v rrm = 50 i r(av) (3) maximum rated i f(av) and t c 3.0 (1) ma v rrm = 100 2.5 (1) v rrm = 150 2.25 (1) v rrm = 200 2.0 (1) v rrm = 300 1.75 (1) v rrm = 400 1.5 (1) v rrm = 500 1.25 (1) v rrm = 600 1.0 (1) v rrm = 700 0.9 (1) v rrm = 800 0.8 (1) v rrm = 900 0.7 (1) v rrm = 1000 0.6 (1)
document number: 93493 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 24-jun-08 3 1n1...a, 1n36..a series medium power silicon rectifier diodes, 12 a vishay high power products note (1) jedec registered values thermal and mechanical specifications parameter symbol test conditions values units maximum operating case and storage temperature range t c , t stg - 65 to 200 (1) c maximum internal thermal resistance, junction to case r thjc dc operation 2.0 (1) c/w thermal resistance, case to sink r thcs mounting surface, smooth, flat and greased 0.5 mounting torque minimum torque applied to nut; non-lubricated threads 1.36 (12) n m (lbf in) maximum 1.69 (15) minimum torque applied to nut; lubricated threads 1.07 (9.45) maximum 1.30 (11.55) minimum torque applied to device ca se; lubricated threads 1.17 (10.35) maximum 1.43 (12.65) approximate weight 7.0 g 0.25 oz. case style jedec do-203aa (do-4)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93493 4 revision: 24-jun-08 1n1...a, 1n36..a series vishay high power products medium power silicon rectifier diodes, 12 a fig. 1 - average forward current vs. maximum allowable case temperature fig. 2 - maximum low level forward power loss vs. average forward current fig. 3 - maximum high level forward power loss vs. average forward current fig. 4 - maximum forward voltage vs. forward current fig. 5 - maximum trans ient thermal impedance, junction to case vs. pulse duration fig. 6 - maximum non-repetitive 50 hz surge current vs. number of current pulses links to related documents dimensions http://www.vishay.com/doc?95311
document number: 95311 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 30-jun-08 1 do-203aa (do-4) outline dimensions vishay semiconductors dimensions in millimeters (inches) 3.30 (0.13) 4.00 (0.16) 5.50 (0.22) min. 10.20 (0.40) max. 11.50 (0.45) 10.70 (0.42) 10/32" unf-2a for metric devices: m5 x 0.8 0.8 0.1 (0.03 0.004) r 0.40 r (0.02) ? 6.8 (0.27) ? 1.80 0.20 (? 0.07 0.01) 3.50 (0.14) 20.30 (0.80) max. 11 (0.43) 2 + 0.3 0 (0.08 ) + 0.01 0
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